A Study of Stress-Induced P+/N Salicided Junction Leakage Failure and Optimized Process Conditions for Sub-0.15-Um Cmos Technology

By: Material type: ArticleArticleDescription: 1985-1992 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.49, No.11 (Nov. 2002) Available