A Study of Stress-Induced P+/N Salicided Junction Leakage Failure and Optimized Process Conditions for Sub-0.15-Um Cmos Technology (Record no. 765575)

MARC details
000 -LEADER
fixed length control field 00510nab a2200133Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2002 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Lee, J. -S.
9 (RLIN) 755853
245 #2 - TITLE STATEMENT
Title A Study of Stress-Induced P+/N Salicided Junction Leakage Failure and Optimized Process Conditions for Sub-0.15-Um Cmos Technology
300 ## - PHYSICAL DESCRIPTION
Extent 1985-1992 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Parkdale Develop Designer Fiber
9 (RLIN) 813404
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Young'S Modulus
9 (RLIN) 174252
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2002
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.49, No.11 (Nov. 2002)   19/08/2023 Articles