Ultrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2

By: Material type: ArticleArticleDescription: 60-65 pSubject(s): In: Journal of Materials Research
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Articles Articles Periodical Section Vol.18, No.01 (Jan. 2003) Available