Ultrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2
Choi, Kyu-Jeong
Ultrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2 - 60-65 p.
Dielectric
Plasma
Chemical Vapor Deposition (Cvd)
Ultrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2 - 60-65 p.
Dielectric
Plasma
Chemical Vapor Deposition (Cvd)