Ultrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2 (Record no. 763881)

MARC details
000 -LEADER
fixed length control field 00520nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2003 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Choi, Kyu-Jeong
9 (RLIN) 811374
245 #0 - TITLE STATEMENT
Title Ultrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2
300 ## - PHYSICAL DESCRIPTION
Extent 60-65 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Dielectric
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Plasma
9 (RLIN) 115419
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Chemical Vapor Deposition (Cvd)
9 (RLIN) 688088
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2003
Title Journal of Materials Research
International Standard Serial Number 08842914
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.18, No.01 (Jan. 2003)   19/08/2023 Articles