Nitride-Based Light Emitting Diodes with Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer

By: Material type: ArticleArticleDescription: 535-537 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.50, No.02 (Feb. 2003) Available