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Nitride-Based Light Emitting Diodes with Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer

Kuo, C H Tsai, J M Su, Y K

Nitride-Based Light Emitting Diodes with Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer - 535-537 p.

Subjects--Topical Terms:
Hall Measurement
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