Nitride-Based Light Emitting Diodes with Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer (Record no. 760935)

MARC details
000 -LEADER
fixed length control field 00531nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2003 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Kuo, C H
9 (RLIN) 807722
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Tsai, J M
9 (RLIN) 807153
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Su, Y K
9 (RLIN) 778066
245 #0 - TITLE STATEMENT
Title Nitride-Based Light Emitting Diodes with Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer
300 ## - PHYSICAL DESCRIPTION
Extent 535-537 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Hall Measurement
9 (RLIN) 807723
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Led
9 (RLIN) 692847
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2003
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.50, No.02 (Feb. 2003)   19/08/2023 Articles