A Closed- Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron Vlsi Cmos Devices Using Shaliow Trench Isolation

By: Material type: ArticleArticleDescription: 725-733 pSubject(s): In: IEEE Transactions on Electron Devices
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Articles Articles Periodical Section Vol.47, No.04 (Apr. 2000) Available