A Closed- Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron Vlsi Cmos Devices Using Shaliow Trench Isolation (Record no. 740363)

MARC details
000 -LEADER
fixed length control field 00626nab a2200169Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2000 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name lin, Shih-Chieh
9 (RLIN) 768478
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Kuo, James B.
9 (RLIN) 77748
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Sun, Shih-Wei
9 (RLIN) 768479
245 #2 - TITLE STATEMENT
Title A Closed- Form Back-Gate-Bias Related Inverse Narrow-Channel Effect Model for Deep-Submicron Vlsi Cmos Devices Using Shaliow Trench Isolation
300 ## - PHYSICAL DESCRIPTION
Extent 725-733 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Sti
9 (RLIN) 714005
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Con Formal Mapping
9 (RLIN) 768481
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Inverse Narrowchannel Effect
9 (RLIN) 768483
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2000
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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  Engr Abul Kalam Library Vol.47, No.04 (Apr. 2000)   19/08/2023 Articles