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		Standard Definition of Terms for Electronic Digital Computer Ansi/IEEE Std 162-1963 by Ieee Material type: Text Language: English Publication details: New York : Institute of Electrical and Electronics Engineers, c1963 Availability: Items available for loan: Reference Section (1)Location, call number: Reference Section 621.3010218 IEE.
		IEEE Standard 255 Letter Symbols for Semiconductor Devices by Ieee Material type: Text Language: English Publication details: New York : Institute of Electrical and Electronics Engineers, c1963 Availability: Items available for loan: Reference Section (1)Location, call number: Reference Section 621.3010218 IEE.
		Advanced Theory of Semiconductor Devices by Hess, Karl [author] Material type: Text Language: English Publication details: New Delhi : Institute of Electrical and Electronics Engineers, 2003 Online access: Table of Contents Availability: Items available for loan: Circulation Section (1)Location, call number: Circulation Section 621.38152 HES.
		Introduction to Semiconductor Microtechnology by Morgan, D. V [author] Board, K [author] Edition: 2nd Material type: Text Language: English Publication details: Chichester : John Wiley, c1990 Availability: Items available for loan: Circulation Section (1)Location, call number: Circulation Section 621.38152 MOR.
		Physics and Technology of Semiconductor Devices by Grove, A. S [author] Material type: Text Language: English Publication details: New York : John Wiley, c1967 Online access: Table of Contents Availability: Items available for loan: Circulation Section (3)Location, call number: Circulation Section 621.38152 GRO, ...
		Advanced Theory of Semiconductor Devices by Hess, Karl [author] Series: Prentice-Hall Series in Solid State Physical Electronics Material type: Text Language: English Publication details: New Jersey : Printice-Hall, c1988 Availability: Items available for loan: Circulation Section (1)Location, call number: Circulation Section 621.38152 HES.
		IncreasingReliability of Wind Turbines Using Condition Monitoring of Semiconductor Devices: a Review by Moeini, Rana Tricoli, PIETro Hemida, Hassan Baniotopoulos, Charalampos Source: IET Renewable Power Generation Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Visualizing Excitations at Buried Heterojunctions in Organic Semiconductor Blends by Bohm, Marcus L Jakowetz, andreas C Sadhanala, Aditya Huettner, Sven Source: Nature Materials Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Eenhancement of Ferromagnetic Properties in In1.99co0.01o3 by Additional Cu Dopingffect of Composition onTexture and Deformation Behaviour of Wrought Mg Alioys by li, Xing Xia, Changtai Source: Scripta Materialia Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Studies of Magnetic Interactions in Mn-Doped ?-Ga2o3 from First-Principles Calculations by Pei, Guangqing Source: Scripta Materialia Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Mosfet Channel Length Extraction and Interpretion by Taur, Yuan Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Very Slow Charge Trapping and Release in Ion Implanted Gaas by Chiu, Chi-Hsin Boroumand, Farhad A Swanson, J. Garth Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Analysis OfShort-Term Dc-Current Gain Variation During High Current Density Low Temperature Stress of Algaas/Faas Heterojunction Bipolar Transistors by Bovolon, Nicola Schultheis, Rudiger Mulier, Jan-Erik Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Pulsed Mode Micromachined Flow Sensor with Temperature Drift Compensation by Okulan, Nihat Henderson, H. Thurman Ahn, Chong H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Self-Aligned Control of Threshold Voltages in Sub-0.2- Mosfet'S by Kurata, Hajime SugII, Toshihiro Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Low-Frequency Noise in Proton Damaged Ldd Mosfet'S by Hardy, Timothy Deen, M. Jamal Murowinski, R. M Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Measurement of Mosfet Substrate Dopant Profile Via Inversion Layer-To-Substrate Capacitance by Hsu, C. H Chiang, Charles Yu-Teh Yeow, Yew Tong Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling Statistical Dopant Fluctuations in Mos Transistors by Stolk, Peter A Klaassen, D. B. M Widdershoven, Frans P Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Post-Stress Trap Generation Induced by Oxide-Field Stress with Fn Injection by Chen, T.P li, Stelia Fung, S Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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