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		Detecting Signal-Overshoots for Reliability Analysis in High-Speed System-on-Chips by Nourani, Mehrdad Attarha, Amir R Source: IEEE Transactions on Reliability Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Interaction of Interface-Traps Located at Various Sites in Mosfets Under Stress by Chen, Gang li, M. F Source: IEEE Transactions on Reliability Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Comprehensive Study of Hot-Carrier Induced Interface and Oxide Trap Distributions in Mosfet'S Using a Novel Charge Pumping Technique by Mahapatra, S Parikh, Chetan D Viswanathan, Chand R Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Low-Voltage Hot Electrons and Soft-Programming lifetime Prediction in Nonvolatile Memory Celis by Ghetti, andrea Selmi, Luca Bez, Roberto Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Combined Effects of Deuterium Anneals and Deuterated Barrier-Nitride Processing on Hot-Electron Degradation in Mosfet'S by Ference, Thomas G Clark, Wiliam F Hook, Terence B Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Comprehensive Study of Hot Carier Stress-Induced Drain Leakage Current Degradation in Thin-Oxide N-Mosfet'S by Wang, Tahui Chiang, Lu-Ping Zous, Nian-Kai Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A New Technique for Hot Carrier Reliability Evaluations of Flash Memory Celi After Long-Term Program/Erase Cycles by Chung, S.T Yih, Cherng-Ming liang, Mong-Song Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		An Alternative Interpretation of Hot Electron Interface Degradatio in Nmosfet'S Isotope Results Irreconcilable with Major Defect Generation by Hess, Karl Lee, Jung-Ju Suh, Kwang-Pyuk Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hot-Carrier Luminescence in Subquartermicrometer High-Speed Gaas Mesfet'S by onodera, Kyyomitsu Nishimura, Kazumi Furuta, Tomofumi Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Stacked Gate Mid-Channel Injection Flash Eeprom Celi Part II Analysis of Gate Current and Modeling of Programming Characteristics by Kim, Dae M Cho, M Kwon, W. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Interface Properties of No-Annealed N2o-Grown Oxynitride by Lai, P. T Xu, J.P Cheng, Y.C Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Effect of Deuterium Passivation at Different Steps of Cmos Processing on lifetime Improvements of Cmos Transistors by Lee, Jinji Epstein, Yefim Hess, Karl Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Investigation of Oxide Charge Trapping and Detrapping in a Mosfet by Using a Gldl Current Technique by Wang, Tahui Chang, Tse-En Bess, Vicki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Unified Understanding on Fuliy-Depleted Soi Nmosfet Hot-Carrier Degradation by Banna, Srinivasa R Chan, Philip C. H Fung, Samuel K. H Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Verifiction of Electron Distribution in Silicon by Means of Hot Carrier Luminescence Measurements by Selmi, Luca Mastrapasqua, M Bude, J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Study of Interface Trap Generation by Fowler-Nordheim and Substrate-Hot-Carrier Stresses Fo 4-Nm Thick Gate Oxides by Shiue, Jao-Hsian Lee, Joseph Ya-Min Chao, Tien-Sheng Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Novel Single-Device Dc Method for Extraction OfEffective Mobility and Source-Drain Resistances of Fresh and Hot -Carrier Degraded Drain-Resistances of Fresh and Hot-Carrier Degraded Drain-Engineered Mosfet'S by Lou, Choon-Leong Chin, Wai-Kin Pan, Yang Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Opposite-Channel-Based Injection of Hot-Carriers in Soi Mosfet'S Physics and Applications by Ioannou, Dimitris E Duan, Franklin L Zaleski, andrej Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Hot Hole Degradation Effects in Lateral Ndmos Transistors by Moens, Peter Tack, Marnix Degraeve, Robin Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Comparartive Study of Drift Region Designs in Rf Ldmosfets by Cao, Guangjun Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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Your search returned 20 results.