A Novel Single-Device Dc Method for Extraction OfEffective Mobility and Source-Drain Resistances of Fresh and Hot -Carrier Degraded Drain-Resistances of Fresh and Hot-Carrier Degraded Drain-Engineered Mosfet'S

By: Material type: ArticleArticleDescription: 1317-1323 pSubject(s): In: IEEE Transactions on Electron Devices
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Articles Articles Periodical Section Vol.45, No.06 (Jun. 1998) Available