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Nitride-Based Green Light-Emitting Diodes with High Temperature Gan Barrier Layers by
  • Lai, W C
  • Tsai, J M
  • Sheu, J K
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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Nitride-Based Light Emitting Diodes with Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer by
  • Kuo, C H
  • Tsai, J M
  • Su, Y K
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Request article
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