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Analysis of Back-Gate Effect on Breakdown Behaviour of Over 600v Soi Ldmos Transistors by
  • Qiao, M
Source: IET:IEE: Electronics Letters
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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A Very Low-Power Quandrature Vco with Back-Gate Coupling by
  • Kim, Hye-Ryoung
Source: Ieee Journal of Solid-State Circuits
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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