Analysis of Back-Gate Effect on Breakdown Behaviour of Over 600v Soi Ldmos Transistors

By: Material type: ArticleArticleDescription: 1231-1232 pSubject(s): In: IET:IEE: Electronics Letters
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.43, No.22 (Oct. 2007) Available