Analysis of Back-Gate Effect on Breakdown Behaviour of Over 600v Soi Ldmos Transistors (Record no. 749185)

MARC details
000 -LEADER
fixed length control field 00472nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2007 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Qiao, M.
9 (RLIN) 789358
245 #0 - TITLE STATEMENT
Title Analysis of Back-Gate Effect on Breakdown Behaviour of Over 600v Soi Ldmos Transistors
300 ## - PHYSICAL DESCRIPTION
Extent 1231-1232 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Semiconductor Technology
9 (RLIN) 756520
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Analysis
9 (RLIN) 673343
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Back-Gate
9 (RLIN) 789359
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2007
Title IET:IEE: Electronics Letters
International Standard Serial Number 00135194
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.43, No.22 (Oct. 2007)   19/08/2023 Articles