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A Study of Interface Trap Generation by Fowler-Nordheim and Substrate-Hot-Carrier Stresses Fo 4-Nm Thick Gate Oxides by
  • Shiue, Jao-Hsian
  • Lee, Joseph Ya-Min
  • Chao, Tien-Sheng
Source: IEEE Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Impact of Interface Traps on Gate-Induced Drain Leakage Current in N-Type Metal Oxide Semiconductor Field Effect Transistor by
  • touhami, A
  • Bouhdada, A
Source: International Journal of Electronics
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
Determination of Interface and Bulk Traps InSubthreshold Region of Polycrystalline Silicon Thin-Film Transistors by
  • Hastas, N A
  • Tassis, D H
  • Kamarinos, G
Source: Ieee Transactions on Electron Devices
Material type: Article Article; Format: print
Availability: Items available for loan: Engr Abul Kalam Library (1).
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