Impact of Interface Traps on Gate-Induced Drain Leakage Current in N-Type Metal Oxide Semiconductor Field Effect Transistor

By: Material type: ArticleArticleDescription: 539-552 pSubject(s): In: International Journal of Electronics
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.92, No.09 (Sep. 2005) Available