Impact of Interface Traps on Gate-Induced Drain Leakage Current in N-Type Metal Oxide Semiconductor Field Effect Transistor (Record no. 750793)

MARC details
000 -LEADER
fixed length control field 00548nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2005 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name touhami, A
9 (RLIN) 792434
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Bouhdada, A
9 (RLIN) 792435
245 #0 - TITLE STATEMENT
Title Impact of Interface Traps on Gate-Induced Drain Leakage Current in N-Type Metal Oxide Semiconductor Field Effect Transistor
300 ## - PHYSICAL DESCRIPTION
Extent 539-552 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Mosfet
9 (RLIN) 720139
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Leakage Current
9 (RLIN) 709578
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Interface Traps
9 (RLIN) 779743
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2005
Title International Journal of Electronics
International Standard Serial Number 00207217
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.92, No.09 (Sep. 2005)   19/08/2023 Articles