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		Effects OfInversion-Layer Centroid onPerformance of Double-Gate Mosfet'S by Lopez-Vilianueva, A Gamiz, Francisco Palma, Alberto J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices by Yang, Nian Henson, W. Kirklen Wortman, Jimmie J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Verification of Saturation Velocity Lowering in Mosfet'S Inversion Layer by Shigyo, Naoyuki Shimane, Takeshi Enda, Toshiyuki Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Estimation OfEffects of Remote Charge Scattering on Electron Mobility of N-Mosfet'S with Ultrathin Gate Oxides by Yang, Nian Henson, W. Kirklen Wortman, Jimmie J Source: IEEE Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onCalculation ofQuasi-Bound-State Energies and Lifetimes in Inverted Mos Structures with Ultrathin Oxide and Its Application toDirect Tunneling Current by Govoreanu, Bogdan Magnus, Langseth Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Short-Channel Modeling of Bulk Accumulated Mosfets by Murali, Raghunath Austin, Blanca Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Nondesign for Testability for Synchronous Sequential Circuits Based on Conflict Resolution by Xiang, Dong Source: IEEE TransactionsonComputers Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Influences of Buried-Oxide Interface on Inversion-Layer Mobility in Ultrathin Soi Mosfets by Koga, J Takagi, S.-I toriumi, A Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

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