onCalculation ofQuasi-Bound-State Energies and Lifetimes in Inverted Mos Structures with Ultrathin Oxide and Its Application toDirect Tunneling Current

By: Material type: ArticleArticleDescription: 764-773 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.51, No.05 (May. 2004) Available