Ai Gan / Gan Hemts on Silicon Substrates with Ft of 32 / 20 Ghz and F Max of 27 / 22 Ghz for 0.5 / 0.7 Um Gate Length

By: Material type: ArticleArticleDescription: 288-289 pSubject(s): In: IET:IEE: Electronics Letters
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Articles Articles Periodical Section Vol.38, No.06 (Mar. 2002) Available