Ai Gan / Gan Hemts on Silicon Substrates with Ft of 32 / 20 Ghz and F Max of 27 / 22 Ghz for 0.5 / 0.7 Um Gate Length
Javorka, P. Alam, A. Fox, A. Marso, M.
Ai Gan / Gan Hemts on Silicon Substrates with Ft of 32 / 20 Ghz and F Max of 27 / 22 Ghz for 0.5 / 0.7 Um Gate Length - 288-289 p.
Semiconductor Techology
Ai Gan / Gan Hemts on Silicon Substrates with Ft of 32 / 20 Ghz and F Max of 27 / 22 Ghz for 0.5 / 0.7 Um Gate Length - 288-289 p.
Semiconductor Techology