Results of search for 'ccl=su:"Silicon Devices"' › Engr Abul Kalam Library catalog

Results
		Experimental Evidence of Tbd Power-Law for Voltage Dependence of Oxide Breakdown in Ultrathin Gate Oxides by Vayshenker, A Wu, E. Y Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Comprehensive Study of Indium Implantation-Induced Damage Indeep Submicrometer Nmosfet: Device Characterization and Damage Assessment by Liao, H. E Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		High Performance 35 Nm Gate Length Cmos with No Oxynitride Gate Dielectric and Ni Salicide by Inaba, S Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		The Partial Silicon-on-Insulator Technology for Rf Power Ldmosfet Devices and on-Chip Microinductors by Ren, C Cai, J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		onPerformance Advantage of Pd/Soi Cmos with Floating Bodies by Fossum, Jerry G Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Excellent Cross-Talk Isolation, High-Q Inductors, and Reduced Self-Heating in A Tfsoi Technology for System-on-A-Chip Application by Kumar, M. Jeya Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Technology and Reliability Constrained Future Copper Interconnects-Part I: Resistance Modeling by Kapur, P K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Clarification of Floating-Body Effects on Drive Current and Short Channel Effects in Deep Sub-0o.25 Um Partially-Depleted Soi Mosfets by Matsumoto, T Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Sub-100-Nm Vertical Mosfet with Threshold Voltage Adjustment by Mori, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Arsenic/Phosphorus Ldd Optimization By Taking Advantage of Phosphrus Transient Enhanced Diffusion for High Voltage Input/Output Cmos Devices by Wang, C. C Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Accuracy of Approximations in Mosfet Charge Models by Mcandrew, C. C Victory, J. J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Method to Extract Mobility Degradation and total Series Resistance of Fully-Depleted Soi Mosfets by Garcia, F. J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Sub-50-Nm Physical Gate Length Cmos Technology and Behond Using Steep Halo by Wakabayashi, H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Scalable Meander-Line Resistor Model for Silicon Rfics by Deen, M.J Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		A Silicon Thermal Astable Multivibrator for Flow and Temperature Sensing by Gamage, S. K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Quasi-Two-Dimensional Transmission Line Model (Qtd-Tlm) for Planar Ohmic Contact Studies by Chor, E.F Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Intrinsic Threshold Voltage Fluctuations in Decanano Mosfets Due to Local Oxide Thickness Variations by Asenov, A Kaya, S Davies, J. H Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Silc Dynamics in Mos Structures Subject to Periodic Stress by Irrera, I Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		ImprovingQuality of Sub 1.5-Nm-Thick Oxynitride Gate Dielectric for Fets with Narrow Channel and Shallow-Trench Isolation Using Radical Oxygen and Nitrogen by togo, M Watanabe, K Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article
		Soi Bulk and Surface Generaiton Properties Measured withPseudo-Mosfet by Kang, S. G Source: Ieee Transactions on Electron Devices Material type: Article; Format: print Availability: Items available for loan: Engr Abul Kalam Library (1). Request article

Refine your search

Availability

Authors

Holding libraries

Item types

Topics

Your search returned 115 results.