ImprovingQuality of Sub 1.5-Nm-Thick Oxynitride Gate Dielectric for Fets with Narrow Channel and Shallow-Trench Isolation Using Radical Oxygen and Nitrogen

By: Material type: ArticleArticleDescription: 1736-1741 pSubject(s): In: Ieee Transactions on Electron Devices
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Articles Articles Periodical Section Vol.49, No.10 (Oct. 2002) Available