withPromise of Nonvolatility, Practically Infinite Write Endurance, and Short Read and Write Times, Magnetic Tunnel Junction Magnetic Random Access Memory Could Become A Future Mainstream Memory Technology

By: Material type: ArticleArticleDescription: 17-27 pSubject(s): In: Ieee Circuits and Devices Magazine
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Articles Articles Periodical Section Vol.18, No.05 (Sep. 2002) Available