withPromise of Nonvolatility, Practically Infinite Write Endurance, and Short Read and Write Times, Magnetic Tunnel Junction Magnetic Random Access Memory Could Become A Future Mainstream Memory Technology (Record no. 767079)

MARC details
000 -LEADER
fixed length control field 00528nab a2200121Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2002 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Reohr, William
9 (RLIN) 815102
245 #0 - TITLE STATEMENT
Title withPromise of Nonvolatility, Practically Infinite Write Endurance, and Short Read and Write Times, Magnetic Tunnel Junction Magnetic Random Access Memory Could Become A Future Mainstream Memory Technology
300 ## - PHYSICAL DESCRIPTION
Extent 17-27 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Memories of tomorrow
9 (RLIN) 815103
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2002
Title Ieee Circuits and Devices Magazine
International Standard Serial Number 87553996
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.18, No.05 (Sep. 2002)   19/08/2023 Articles