A Compact Threshold Voltage Model for Gate Misalignment Effect of Dg Fd Soi Nmos Devices Considering Fringing Electric Field Effects

By: Material type: ArticleArticleDescription: 587-596 pSubject(s): In: Ieee Transactions on Electron Devices
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.51, No.04 (Apr. 2004) Available