Normal view MARC view ISBD view

A Compact Threshold Voltage Model for Gate Misalignment Effect of Dg Fd Soi Nmos Devices Considering Fringing Electric Field Effects

Sun, Elvis C. Kuo, James B.

A Compact Threshold Voltage Model for Gate Misalignment Effect of Dg Fd Soi Nmos Devices Considering Fringing Electric Field Effects - 587-596 p.

Subjects--Topical Terms:
Device Modeling
Mos

Print
Request article
Suggest for purchase
Send to device
Save record
BIBTEX Dublin Core ISBD MARCXML RIS
More searches

Search for this title in:
Other Databases (Google Scholar) Open Library (openlibrary.org) Pakistan Union Catalogue (pastic.gov.pk) Other Libraries (WorldCat)