Improvement of Dark Current Using Inp/Gaasp Transition Layer in Layer-Area Ingaas Msm Photodetectors

By: Material type: ArticleArticleDescription: 351-356 pSubject(s): In: Ieee Transactions on Electron Devices
Holdings
Item type Current library Call number Vol info Status Date due Barcode
Articles Articles Periodical Section Vol.51, No.03 (Mar. 2004) Available