Improvement of Dark Current Using Inp/Gaasp Transition Layer in Layer-Area Ingaas Msm Photodetectors (Record no. 755977)

MARC details
000 -LEADER
fixed length control field 00507nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2004 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Kim, Junghwan
9 (RLIN) 754825
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Johnson, William B.
9 (RLIN) 800750
245 #0 - TITLE STATEMENT
Title Improvement of Dark Current Using Inp/Gaasp Transition Layer in Layer-Area Ingaas Msm Photodetectors
300 ## - PHYSICAL DESCRIPTION
Extent 351-356 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Epitaxial Layers
9 (RLIN) 774687
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Photodectector
9 (RLIN) 770905
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2004
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.51, No.03 (Mar. 2004)   19/08/2023 Articles