Physically Based Modeling of Lowfield Electron Mobility in Ultrathin Single-and Double -Gate Soi N-Mosfets (Record no. 762823)

MARC details
000 -LEADER
fixed length control field 00487nab a2200145Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s2003 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Esseni, D
9 (RLIN) 800917
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Abramol, E.
9 (RLIN) 810057
245 #0 - TITLE STATEMENT
Title Physically Based Modeling of Lowfield Electron Mobility in Ultrathin Single-and Double -Gate Soi N-Mosfets
300 ## - PHYSICAL DESCRIPTION
Extent 2445-2453 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Mobility
9 (RLIN) 164527
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Modeling
9 (RLIN) 15553
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 2003
Title Ieee Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
Holdings
Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.50, No.12 (Dec. 2003)   19/08/2023 Articles