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Physically Based Modeling of Lowfield Electron Mobility in Ultrathin Single-and Double -Gate Soi N-Mosfets

Esseni, D Abramol, E.

Physically Based Modeling of Lowfield Electron Mobility in Ultrathin Single-and Double -Gate Soi N-Mosfets - 2445-2453 p.

Subjects--Topical Terms:
Mobility
Modeling

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