Characterization of Various Stress-Induced Oxide Traps in Mosfet'S by Using a Subthreshold Transient Current Technique (Record no. 745150)

MARC details
000 -LEADER
fixed length control field 00569nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s1998 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Wang, Tahui
9 (RLIN) 777572
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Ching, Lu-Ping
9 (RLIN) 780281
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Huang, Chimoon
9 (RLIN) 780283
245 #0 - TITLE STATEMENT
Title Characterization of Various Stress-Induced Oxide Traps in Mosfet'S by Using a Subthreshold Transient Current Technique
300 ## - PHYSICAL DESCRIPTION
Extent 1791-1796 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Characte Regognition
9 (RLIN) 677235
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Various Implant Types
9 (RLIN) 780285
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 1998
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.45, No.08 (Aug. 1998)   19/08/2023 Articles