Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices (Record no. 744137)

MARC details
000 -LEADER
fixed length control field 00607nab a2200169Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s1999 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Yang, Nian
9 (RLIN) 777930
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Henson, W. Kirklen
9 (RLIN) 770953
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Wortman, Jimmie J.
9 (RLIN) 777933
245 #0 - TITLE STATEMENT
Title Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices
300 ## - PHYSICAL DESCRIPTION
Extent 1464-1471 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Capacitance
9 (RLIN) 707591
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Dielectric Films
9 (RLIN) 496077
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Inversion Layers
9 (RLIN) 768455
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 1999
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.46, No.07 (Jul. 1999)   19/08/2023 Articles