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Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices

Yang, Nian Henson, W. Kirklen Wortman, Jimmie J.

Modeling Study of Ultrathin Gate Oxides Using Direct Tunneling Current and Capacitance Voltage Measurements in Mos Devices - 1464-1471 p.

Subjects--Topical Terms:
Capacitance
Dielectric Films
Inversion Layers

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