Dependence of Fermi Level Positions at Gate and Substrate onReliability of Ultrathin Mos Gate Oxides (Record no. 744135)

MARC details
000 -LEADER
fixed length control field 00583nab a2200169Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s1999 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Yang, Tien-Chun
9 (RLIN) 768497
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Sachdev, Pinkesh
9 (RLIN) 777926
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name SARaswat, Krishna C.
9 (RLIN) 768498
245 #0 - TITLE STATEMENT
Title Dependence of Fermi Level Positions at Gate and Substrate onReliability of Ultrathin Mos Gate Oxides
300 ## - PHYSICAL DESCRIPTION
Extent 1457-1463 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Barrier Height
9 (RLIN) 777927
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Ultrathin Sections
9 (RLIN) 777928
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Oxide
9 (RLIN) 83600
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 1999
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
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  Engr Abul Kalam Library Vol.46, No.07 (Jul. 1999)   19/08/2023 Articles