A New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S (Record no. 743453)

MARC details
000 -LEADER
fixed length control field 00538nab a2200157Ia 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 230808s1999 |||||||f |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Chen, Hsin-li
9 (RLIN) 776141
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Wu, Chen-Yang
9 (RLIN) 747370
245 #2 - TITLE STATEMENT
Title A New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S
300 ## - PHYSICAL DESCRIPTION
Extent 722-728 p.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Digbl
9 (RLIN) 776144
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Impact-Ionization
9 (RLIN) 771576
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Model
9 (RLIN) 173318
773 ## - HOST ITEM ENTRY
Place, publisher, and date of publication 1999
Title IEEE Transactions on Electron Devices
International Standard Serial Number 00189383
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Articles
-- 51
-- ABUL KALAM Library
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Not for loan Home library Serial Enumeration / chronology Total Checkouts Date last seen Koha item type
  Engr Abul Kalam Library Vol.46, No.04 (Apr. 1999)   19/08/2023 Articles