Normal view MARC view ISBD view

A New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S

Chen, Hsin-li Wu, Chen-Yang

A New I-V Model ConsideringImpact-Ionization Effect Initiated byDigbl Current for Intrinsic N-Channel Poly-Si Tft'S - 722-728 p.

Subjects--Topical Terms:
Digbl
Impact-Ionization
Model

Print
Request article
Suggest for purchase
Send to device
Save record
BIBTEX Dublin Core ISBD MARCXML RIS
More searches

Search for this title in:
Other Databases (Google Scholar) Open Library (openlibrary.org) Pakistan Union Catalogue (pastic.gov.pk) Other Libraries (WorldCat)