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Characterization of Interface Degradation in Deep Submicronmosfets By Gate Controlled -Diode Measurement

Huang, J.-T Chen, T.P. Tse, M.S.

Characterization of Interface Degradation in Deep Submicronmosfets By Gate Controlled -Diode Measurement - 639-644 p.

Subjects--Topical Terms:
Mosfets
Gate-Controlled -Diode
Fowler

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