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A Study of Interface Trap Generation by Fowler-Nordheim and Substrate-Hot-Carrier Stresses Fo 4-Nm Thick Gate Oxides

Shiue, Jao-Hsian Lee, Joseph Ya-Min Chao, Tien-Sheng

A Study of Interface Trap Generation by Fowler-Nordheim and Substrate-Hot-Carrier Stresses Fo 4-Nm Thick Gate Oxides - 1705-1710 p.

Subjects--Topical Terms:
Hot Carrier
Interface Traps
Mos Device

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