| 000 | 00510nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s1999 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aRamamurthy, A _9807950 |
||
| 100 |
_aSawant, S _9745058 |
||
| 100 |
_aBaliga, B.J _9780829 |
||
| 245 | 0 | _aModelingthe [Dv/Dt] ofIgbt During Inductive Turn off. | |
| 300 | _a601-606 p. | ||
| 650 |
_aInsulated Gate Bipolar Transistors _9451652 |
||
| 650 |
_aPower Semi Conductor _9780831 |
||
| 773 |
_d1999 _tIeee Transactions on PowerElectronics _x08858993 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c794662 _d794662 |
||