000 00590nab a2200157Ia 4500
008 230808s2000 |||||||f |||| 00| 0 eng d
100 _aKuhn, H
_9840048
100 _aMnatsakanov, T. T
_9840049
100 _aSchlogl, A. E
_9840050
245 0 _aTemperature Dependent Characterization on Bipolar Silicon Power Semiconductors- A New Physical Model Validated By Device - Internal Probing Between 400-100k.
300 _a1267-1274 p.
650 _aMobility
_9164527
650 _aPhysical Modeling
_9162082
773 _d2000
_tIeee Transactions on PowerElectronics
_x08858993
942 _cART
_o51
_pABUL KALAM Library
999 _c785076
_d785076