| 000 | 00539nab a2200157Ia 4500 | ||
|---|---|---|---|
| 008 | 230808s2002 |||||||f |||| 00| 0 eng d | ||
| 100 |
_aKumar, M.J _9797334 |
||
| 100 |
_aLiu, H _9677453 |
||
| 245 | 0 | _aDevice Characteristics of3-D Bicmos Technology Using Selective Epitaxial Growth and Lateral Solid Phase Epitaxy | |
| 300 | _a2359-2361 p. | ||
| 650 |
_aDevice Characterization _9777560 |
||
| 650 |
_aBicmos _9756465 |
||
| 650 |
_aLateral Flow _9789873 |
||
| 773 |
_d2002 _tIeee Transactions on Electron Devices _x00189383 |
||
| 942 |
_cART _o51 _pABUL KALAM Library |
||
| 999 |
_c772077 _d772077 |
||