000			00528nab a2200121Ia 4500
008			230808s2002 |||||||f |||| 00| 0 eng d
100			_aReohr, William _9815102
245		0	_awithPromise of Nonvolatility, Practically Infinite Write Endurance, and Short Read and Write Times, Magnetic Tunnel Junction Magnetic Random Access Memory Could Become A Future Mainstream Memory Technology
300			_a17-27 p.
650			_aMemories of tomorrow _9815103
773			_d2002 _tIeee Circuits and Devices Magazine _x87553996
942			_cART _o51 _pABUL KALAM Library
999			_c767079 _d767079