000 00411nab a2200121Ia 4500
008 230808s2002 |||||||f |||| 00| 0 eng d
100 _aTang, D C
_9814238
245 0 _aModeling of Quantum Effects of Ultrathin Oxide Mos Stsructure with An Effective Potewntial
300 _a238-242 p.
650 _aPotential Advantages
_9776716
773 _d2002
_tIeee Transactions on Nanotechnology
_x1536125X
942 _cART
_o51
_pABUL KALAM Library
999 _c766320
_d766320