000 00446nab a2200121Ia 4500
008 230808s2002 |||||||f |||| 00| 0 eng d
100 _aBrown, G.J.
_9677138
245 0 _aIntrinsic Fluctuation in Sub 10-Nm Double Gate Mosfet Introduced By Distcrete of Vcharge and Matter
300 _a195-200 p.
650 _aCharge Asymmetric Resonance Tunneling (Cart)
_9721705
773 _d2002
_tIeee Transactions on Nanotechnology
_x1536125X
942 _cART
_o51
_pABUL KALAM Library
999 _c766306
_d766306