000			00537nab a2200145Ia 4500
008			230808s2002 |||||||f |||| 00| 0 eng d
100			_aYang, Wei-Bin _9806499
245		0	_aImprovimgElectrical Integrity of Cu-Cosi2 Contacted N+P Junction Diodes Using Nitrogen-Incorporated Ta Films As A Diffusion Barrier
300			_a1947-1954 p.
650			_aCobalt Oxides _9688324
650			_aCopper Conductor _9813394
650			_aDiffusion Barriers _9768423
773			_d2002 _tIeee Transactions on Electron Devices _x00189383
942			_cART _o51 _pABUL KALAM Library
999			_c765566 _d765566