000			00520nab a2200145Ia 4500
008			230808s2003 |||||||f |||| 00| 0 eng d
100			_aChoi, Kyu-Jeong _9811374
245		0	_aUltrathin Hfo2 Gate Dielectric Grown By Plasma-Enhanced Chemical Vapor Deposition Using Hf[Oc(Ch3)3]4 As A Precursor InAbsence of O2
300			_a60-65 p.
650			_aDielectric
650			_aPlasma _9115419
650			_aChemical Vapor Deposition (Cvd) _9688088
773			_d2003 _tJournal of Materials Research _x08842914
942			_cART _o51 _pABUL KALAM Library
999			_c763881 _d763881